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| AOD494 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD494 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOD494 is Pb-free (meets ROHS & Sony 259 specifications). AOD494L is a Green Product ordering option. AOD494 and AOD494L are electrically identical. Features VDS (V) = 30V ID = 55A (VGS = 10V) RDS(ON) <11m (VGS = 10V) RDS(ON) < 13.5m (VGS = 4.5V) TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Continuous Drain Current TC=100C ID Pulsed Drain Current C Avalanche Current C C Maximum 30 12 55 39 120 30 135 63 31 4 2.6 -55 to 175 Units V V A A mJ W W C IDM IAR EAR PD PDSM TJ, TSTG Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B TC=100C TA=25C A Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D A,D Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 15 41 2 Max 20 50 2.4 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD494 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 120 1.6 9 15.3 11 40 0.73 Min 30 1 5 0.1 2.5 11 18 13.5 1.0 66 1452 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1210 330 85 1.2 22 10 3.7 2.7 10 6.3 21 2.8 36 47 1.6 28 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 45 A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the120 mounted to a large heatsink, assumin device a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 90 4.5V ID (A) 60 ID(A) 20 15 10 30 VGS=2.5V 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 15 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 1.0E+02 1.0E+01 120 1.0E+00 25C 125C 10 25C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 VSD (Volts) 50 Figure 6: Body-Diode Characteristics Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=4.5 VGS=10V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 25C 6V 30 25 VDS=5V 3.5V RDS(ON) (m) 12 VGS=4.5V 9 VGS=10V 6 ID=20A RDS(ON) (m) 15 125C 15 41 0.4 20 0.6 0.8 1.0 Alpha & Omega Semiconductor, Ltd. AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 2000 1500 Ciss 1000 500 Crss 0 0 5 Coss 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited 10s 100 1m 10m 0.1 Power (W) 140 120 100 80 60 40 20 0.001 TJ(Max)=175C TC=25C DC 0.1 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJc .RJc RJC=2.4C/W 1 120 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 15 1 20 10 100 Pulse Width (s) 41 50 Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD494 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current Power Dissipation (W) TA=25C 40 70 60 50 40 30 20 10 0 0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) 20 0 0.000001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 120 Current rating ID(A) 40 Power (W) 100 80 60 40 20 TJ(Max)=150C TA=25C 20 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In 120 descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 100 1000 10 15 20 Pulse Width (s) 41 50 Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. |
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